
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Human Body Model
2kV
Charge-Device Model
1kV
Machine Model
200V
Voltage between any two pins
6.0V
Current through VDD or VSS
50mA
Current sunk and sourced by CE pin
10mA
5mA
Storage Temperature Range
-65°C to 150°C
150°C
For soldering specifications:
see product folder at www.national.com and
www.national.com/ms/MS/MS-SOLDERING.pdf
Supply Voltage V
S=(VDD - AGND)
2.7V to 5.25V
-40°C to 85°C
Package Thermal Resistance (
Note 4)14-Pin LLP (
θ
JA)
44 °C/W
Unless otherwise specified, all limits guaranteed for T
A = 25°C, VS=(VDD – AGND), VS=3.3V and AGND = DGND =0V,
VREF= 2.5V, Internal Zero= 20% VREF. Boldface limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Power Supply Specification
I
S
Supply Current
3-lead amperometric cell mode
MODECN = 0x03
10
15
13.5
A
Standby mode
MODECN = 0x02
6.5
10
8
Temperature Measurement mode with TIA OFF
MODECN = 0x06
11.4
15
13.5
Temperature Measurement mode with TIA ON
MODECN = 0x07
14.9
20
18
2-lead ground referred galvanic cell mode
VREF=1.5V
MODECN = 0x01
6.2
9
8
Deep Sleep mode
MODECN = 0x00
0.6
1
0.85
Potentiostat
Bias_RW
Bias Programming range
(differential voltage between RE
pin and WE pin)
Percentage of voltage referred to VREF or VDD
±24
%
Bias Programming Resolution
First two smallest step
±1
%
All other steps
±2
I
RE
Input bias current at RE pin
VDD=2.7V;
Internal Zero 50% VDD
-90
-800
90
800
pA
VDD=5.25V;
Internal Zero 50% VDD
-90
-900
90
900
I
CE
Minimum operating current
capability
sink
750
A
source
750
Minimum charging capability
sink
10
mA
source
10
AOL_A1
Open loop voltage gain of
control loop op amp (A1)
300mV
≤VCE≤Vs-300mV;
-750A
≤ICE≤750A
104
120
dB
en_RW
Low Frequency integrated noise
between RE pin and WE pin
0.1Hz to 10Hz, Zero Bias
3.4
Vpp
0.1Hz to 10Hz, with Bias
5.1
3
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LMP91000